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features
logic level gate drive ! " "# $ % $# " #" &' $( )% !" # *#+, descriptionspecifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on- resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. gds gate drain source s d g hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 55v r ds(on) max. 0.14 i d 2.0a parameter units i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation (pcb mount) p d @t a = 25c power dissipation (pcb mount) linear derating factor (pcb mount) mw/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient (pcb mount, steady state) 90 120 c/w r ja junction-to-ambient (pcb mount, steady state) 50 60 c w -55 to + 150 1.0 8.3 16 max. 2.8 1.6 16 2.0 2.1 0.1 32 2.0
automotive grade sot-223 AUIRLL014N form quantity tube 95 AUIRLL014N tape and reel 2500 AUIRLL014Ntr base part number package type standard pack orderable part number AUIRLL014N sot-223

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static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v (br)dss / t j breakdown voltage temp. coefficient CCC 0.015 CCC v/c CCC CCC 0.14 r ds(on) static drain-to-source on-resistance CCC CCC 0.20 CCC CCC 0.28 v gs(th) gate threshold voltage 1.0 CCC 2.0 v gfs forward transconductance 2.3 CCC CCC s i dss drain-to-source leakage current CCC CCC 25 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 9.5 14 q gs gate-to-source charge CCC 1.1 1.7 nc q gd gate-to-drain ("miller") charge CCC 3.0 4.4 t d(on) turn-on delay time CCC 5.1 CCC t r rise time CCC 4.9 CCC ns t d(off) turn-off delay time CCC 14 CCC t f fall time CCC 2.9 CCC c iss input capacitance CCC 230 CCC c oss output capacitance CCC 66 CCC pf c rss reverse transfer capacitance CCC 30 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 1.3 (body diode) a i sm pulsed source current CCC CCC 16 (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 41 61 ns q rr reverse recovery charge CCC 73 110 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 5.0v, i d = 1.2a v gs = 4.0v, i d = 1.0a v ds = 25v, i d = 1.0a i d = 2.0a v ds = 44v v gs = 16v v gs = -16v v gs = 10v, see fig. 6 and 9 v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 2.0a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 150c mosfet symbol v dd = 28v t j = 25c, i f = 2.0a conditions i d = 2.0a r g = 6.0 t j = 25c, i s = 2.0a, v gs = 0v showing the integral reverse p-n junction diode. conditions r d = 14 , see fig. 10 downloaded from: http:///
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" #"# !( 1 10 100 0.1 1 10 100 20 s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 100 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20 s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 10 100 3.0 4.0 5.0 6.0 7.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 25v 20 s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 2.0a d downloaded from: http:///

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1'# %+ " " 2 ! /0 2%# / " !" /0 %# / " %# $ / 0 100 200 300 400 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 3 6 9 12 15 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 i = 2.0a v = 44v v = 28v d dsds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 0.1 1 10 100 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) t = 25c t = 150c single pulse 10 s 100 s 1ms 10ms a aj downloaded from: http:///
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q g q gs q gd v g charge + - # !-# 1 0.1 % # # <( d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90%10% v gs t d(on) t r t d(off) t f % 3+ % !# 4 2 ! 3+ 2 ! !# 1'# 5++ 6"( 7# 8 / 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , rectangular pulse duration (sec) 1 d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a thermal response (z ) thja p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thja a downloaded from: http:///
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - , # $&# +
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" 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) min. 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel contains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) max. 14.40 (.566) 12.40 (.488) 4 4

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; * #+ 8 +# 6 +< 8 = http//www.irf.com/ ;; 5'" >+ ? 5!* @# @#+ "0 ;;; ) " 0 qualification information ? sot-223 msl1 rohs compliant yes esd machine model class m1a (+/- 50v) ??? aec-q101-002 human body model class h0 (+/- 250v) ??? aec-q101-001 charged device model class c5 (+/- 1125v) ??? aec-q101-005 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level downloaded from: http:///

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date comments ? added "logic level gate drive" bullet in the features section on page 1 ? updated part marking on page 8 ? updated data sheet with new ir corporate template revision history 3/25/2014 downloaded from: http:///

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